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STB12NK80Z STP12NK80Z - STW12NK80Z
N-CHANNEL 800V - 0.65 - 10.5A - TO220-DPAK-TO247 Zener-Protected SuperMESHTM MOSFET
General features
Type STB12NK80Z STP12NK80Z STW12NK80Z
s s s s s s
Package
RDS(on) ID 10.5 A 10.5 A 10.5 A Pw 190 W 190 W 190 W
3 1 2
1 2 3
VDSS
800 V <0.75 800 V <0.75 800 V <0.75
EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEABILITY
TO-220
1
3
TO-247
DPAK
Internal schematic diagram
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Applications
s s
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC
Order codes
Sales Type STB12NK80ZT4 STP12NK80Z STW12NK80Z Marking B12NK80Z P12NK80Z W12NK80Z Package DPAK TO-220 TO-247 Packaging TAPE & REEL TUBE TUBE
September 2005
Rev 2 1/15
www.st.com 15
1 Electrical ratings
STB12NK80Z - STP12NK80Z - STW12NK80Z
1
Table 1.
Electrical ratings
Absolute maximum ratings
Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Value 800 800 30 10.5 6.6 42 190 1.51 6000 4.5 Unit V V V A A A W W/C V V/ns
Symbol VDS VDGR VGS ID ID IDM Note 2 PTOT
Vesd(G-S) dv/dt Note 1 Tj Tstg
G-S ESD (HBM C=100pF, R=1.5k) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature
-55 to 150
C
Table 2.
Thermal data
TO-220/DPAK TO-247 0.66 62.5 300 50 Unit C/W C/W C
Rthj-case Rthj-amb Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj=25C, ID=IAR, VDD = 50V) Max Value 10.5 400 Unit A mJ
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STB12NK80Z - STP12NK80Z - STW12NK80Z
2 Electrical characteristics
2
Electrical characteristics
(TCASE = 25 C unless otherwise specified)
Table 4.
Symbol V(BR)DSS IDSS
On/off states
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 1mA, V GS= 0 VDS = Max Rating, VDS = Max Rating,Tc = 125C VGS = 20V VDS= VGS, ID = 100 A VGS= 10 V, ID= 4.5 A 3 3.75 0.65 Min. 800 1 50
10
Typ.
Max.
Unit V A A A V
IGSS VGS(th) RDS(on)
4.5 0.75
Table 5.
Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Qg Qgs Qgd
Dynamic
Parameter Forward Transconductance Test Conditions VDS =15V, ID = 5.25A Min. Typ. 12 2620 250 53 100 87 14 44 Max. Unit S pF pF pF pF nC nC nC
Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Equivalent Ouput Capacitance VGS=0, VDS =0V to 640V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=640V, ID = 10.5 A VGS =10V (see Figure 17)
Table 6.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on Delay Time Rise Time Test Conditions VDD=400 V, ID=5.25 A, RG=4.7, VGS=10V (see Figure 18) VDD=400 V, ID=5.25A, RG=4.7, VGS=10V (see Figure 18) VDD=640 V, ID=10.5A, RG=4.7, VGS=10V (see Figure 18) Min. Typ. 30 18 Max. Unit ns ns
Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time
70 20 16 15 28
ns ns ns ns ns
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2 Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
Table 7.
Symbol ISD ISDMNote 2 VSDNote 4 trr Qrr IRRM
Source drain diode
Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=10.5 A, VGS=0 ISD=10.5A, di/dt = 100A/s, VDD=100 V, Tj=150C 635 5.9 18.5 Test Conditions Min. Typ. Max. 10.5 42 1.6 Unit A A V ns C A
Table 8.
Symbol BVGSO Note 6
Gate-source zener diode
Parameter Gate-Source Breakdown Voltage Test Conditions Igs=1mA (Open Drain) Min. 30 Typ. Max. Unit V
(1) ISD 10.5 A, di/dt 200A/s, VDD V(BR)DSS , Tj TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300s, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%VDSS (6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STB12NK80Z - STP12NK80Z - STW12NK80Z
2 Electrical characteristics
2.1
Electrical Characteristics (curves)
Safe Operating Area for TO-220/DPAK Figure 2. Thermal Impedance for TO-220/DPAK
Figure 1.
Figure 3.
Safe Operating Area for TO-247
Figure 4.
Thermal Impedance for TO-247
Figure 5.
Output Characteristics
Figure 6.
Transfer Characteristics
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2 Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
Figure 8. Static Drain-Source on Resistance
Figure 7.
Transconductance
Figure 9.
Gate Charge vs Gate -Source Voltage
Figure 11. Capacitance Variations
Figure 10. Normalized Gate Threshold Voltage Figure 12. Normalized on Resistance vs vs Temperatute Temperature
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Figure 13. Source-drain Diode Forward Characteristics
2 Electrical characteristics
Figure 14. Normalized BVDSS vs Temperature
Figure 15. Maximum Avalanche Energy vs Temperature
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3 Test circuits
STB12NK80Z - STP12NK80Z - STW12NK80Z
3
Test circuits
Figure 17. Gate Charge Test Circuit
Figure 16. Switching Times Test Circuit For Resistive Load
Figure 18. Test Circuit For Indictive Load Switching and Diode Recovery Times
Figure 20. Unclamped Inductive Load Test Circuit
Figure 19. Unclamped Inductive Waveform
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STB12NK80Z - STP12NK80Z - STW12NK80Z
4 Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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4 Package mechanical data
STB12NK80Z - STP12NK80Z - STW12NK80Z
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STB12NK80Z - STP12NK80Z - STW12NK80Z
4 Package mechanical data
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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4 Package mechanical data
STB12NK80Z - STP12NK80Z - STW12NK80Z
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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STB12NK80Z - STP12NK80Z - STW12NK80Z
5 Packing mechanical data
5
Packing mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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6 Revision History
STB12NK80Z - STP12NK80Z - STW12NK80Z
6
Revision History
Date 02-Sep-2005 Revision 2 Inserted Ecopack indication Changes
14/15
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6 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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